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ST93C46A,46C,46T ST93C47C,47T
1K (64 x 16 or 128 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 64 x 16 or 128 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST93C46 version - 3V to 5.5V for ST93C47 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCE for "C" VERSION ST93C46A, ST93C46C, ST93C46T, ST93C47C, ST93C47T are replaced by the M93C46 DESCRIPTION This specification covers a range of 1K bit serial EEPROM products, the ST93C46A,46C,46T specified at 5V10% and the ST93C47C,47T specified at 3V to 5.5V. In the text, products are referred to as ST93C46. The ST93C46 is a 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON's High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). Table 1. Signal Names
S D Q C ORG VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
8 1
PSDIP8 (B) 0.4mm Frame
8 1
SO8 (M) 150mil Width
Figure 1. Logic Diagram
VCC
D C S ORG ST93C46 ST93C47
Q
VSS
AI00871C
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/13
ST93C46A/46C/46T, ST93C47C/47T
Table 2. Absolute Maximum Ratings (1)
Symbol TA TSTG TLEAD VIO VCC VESD Electrostatic Discharge Voltage (Machine model) (3) Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value -40 to 125 -65 to 150 215 260 -0.3 to VCC +0.5 -0.3 to 6.5
(2)
Unit C C C V V V V
Input or Output Voltages (Q = VOH or Hi-Z) Supply Voltage Electrostatic Discharge Voltage (Human Body model) ST93C46A,T ST93C46C ST93C46
2000 4000 500
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 ). 3. EIAJ IC-121 (Condition C) (200pF, 0 ).
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C46 ST93C47 S C D Q 1 2 3 4 8 7 6 5
AI00872C
ST93C46 ST93C47 VCC DU ORG VSS S C D Q 1 2 3 4 8 7 6 5
AI00874C
VCC DU ORG VSS
Warning: DU = Don't Use
Warning: DU = Don't Use
Figure 2C. SO, 90 Turn, Pin Connections
ST93C46T ST93C47T DU VCC S C 1 2 3 4 8 7 6 5
AI00982B
DESCRIPTION (cont'd) The 1K bit memory is divided into either 128 x 8 bit bytes or 64 x 16 bit words. The organization may be selected by a signal on the ORG input. The memory is accessed by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. A Read instruction loads the address of the first byte/word to be read into an internal address pointer. The data is then clocked out serially. The address pointer is automatically incremented after the data is output and, if the Chip Select input (S) is held High, the ST93C46 can output a sequential stream of data bytes/words. In this way, the memory can be read as a data stream from 8 to 1024 bits long, or continuously as the address
ORG VSS Q D
Warning: DU = Don't Use 2/13
ST93C46A/46C/46T, ST93C47C/47T
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times Input Pulse Voltages Input Timing Reference Voltages Output Timing Reference Voltages 20ns 0.4V to 2.4V 1V to 2.0V 0.8V to 2.0V
Figure 3. AC Testing Input Output Waveforms
2.4V
2V 1V
2.0V 0.8V OUTPUT
AI00815
0.4V INPUT
Note that Output Hi-Z is defined as the point where data is no longer driven.
Table 3. Capacitance (1) (TA = 25 C, f = 1 MHz )
Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 5 5 Unit pF pF
Note: 1. Sampled only, not 100% tested.
Table 4. DC Characteristics (TA = 0 to 70C or -40 to 85C; VCC = 4.5V to 5.5V or 3V to 5.5V)
Symbol ILI ILO ICC Parameter Input Leakage Current Output Leakage Current Supply Current (TTL Inputs) Supply Current (CMOS Inputs) ICC1 VIL Supply Current (Standby) Input Low Voltage (D, C, S) Test Condition 0V VIN VCC 0V VOUT VCC, Q in Hi-Z S = VIH, f = 1 MHz S = VIH, f = 1 MHz S = VSS, C = VSS, ORG = VSS or VCC VCC = 5V 10% 3V VCC 4.5V Input High Voltage (D, C, S) VCC = 5V 10% 3V VCC 4.5V Output Low Voltage IOL = 2.1mA IOL = 10 A IOH = -400A IOH = -10A 2.4 VCC - 0.2 -0.3 -0.3 2 0.8 VCC Min Max 2.5 2.5 3 2 50 0.8 0.2 VCC VCC + 1 VCC + 1 0.4 0.2 Unit A A mA mA A V V V V V V V V
VIH
VOL
VOH
Output High Voltage
3/13
ST93C46A/46C/46T, ST93C47C/47T
Table 5. AC Characteristics (TA = 0 to 70C or -40 to 85C; VCC = 4.5V to 5.5V or 3V to 5.5V)
Symbol tSHCH tCLSH tDVCH tCHDX Alt tCSS tSKS tDIS tDIH Parameter Chip Select High to Clock High Clock Low to Chip Select High Input Valid to Clock High Temp. Range: grade 1 Clock High to Input Transition Temp. Range: grades 3, 6 Test Condition Min 50 100 100 100 200 500 500 0 250 Note 1 250 500 ST93C46A ST93C46C, 47C tCHCL tCLCH tW fC tSKH tSKL tWP fSK Clock High to Clock Low Clock Low to Clock High Erase/Write Cycle time Clock Frequency 0 Note 2 Note 2 250 250 10 1 300 200 Max Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms MHz
tCHQL tCHQV tCLSL tSLCH tSLSH tSHQV tSLQZ
tPD0 tPD1 tCSH
Clock High to Output Low Clock High to Output Valid Clock Low to Chip Select Low Chip Select Low to Clock High
tCS tSV tDF
Chip Select Low to Chip Select High Chip Select High to Output Valid Chip Select Low to Output Hi-Z
Notes: 1. Chip Select must be brought low for a minimum of 250 ns (tSLSH) between consecutive instruction cycles. 2. The Clock frequency specification calls for a minimum clock period of 1 s, therefore the sum of the timings tCHCL + tCLCH must be greater or equal to 1 s. For example, if tCHCL is 250 ns, then tCLCH must be at least 750 ns.
Figure 4. Synchronous Timing, Start and Op-Code Input
tCLSH C tSHCH S tDVCH D START OP CODE
tCHCL
tCLCH
tCHDX OP CODE
START
OP CODE INPUT
AI01428
4/13
ST93C46A/46C/46T, ST93C47C/47T
Figure 5. Synchronous Timing, Read or Write
C tCLSL S tDVCH D An tCHQL Q15/Q7 tCHDX A0 tSLQZ Q0 tCHQV tSLSH
Hi-Z Q
ADDRESS INPUT
DATA OUTPUT
AI00820C
tSLCH C tCLSL S tDVCH D An tCHDX A0/D0 tSHQV Hi-Z Q BUSY tW ADDRESS/DATA INPUT WRITE CYCLE
AI01429
tSLSH
tSLQZ READY
DESCRIPTION (cont'd) counter automatically rolls over to '00' when the highest address is reached. Programming is internally self-timed (the external clock signal on C input may be disconnected or left running after the start of a Write cycle) and does not require an erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at one time into one of the 128 bytes or 64 words. After the start of the programming cycle a Busy/Ready signal is available on the Data output (Q) when Chip Select (S) is High.
An internal feature of the ST93C46 provides Power-on Data Protection by inhibiting any operation when the Supply is too low. The design of the ST93C46 and the High Endurance CMOS technology used for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles and a data retention of 40 years. The DU (Don't Use) pin does not affect the function of the memory and it is reserved for use by SGSTHOMSON during test sequences.The pin may be left unconnected or may be connected to VCC or VSS. Direct connection of DU to VSS is recommended for the lowest standby power consumption.
5/13
ST93C46A/46C/46T, ST93C47C/47T
MEMORY ORGANIZATION The ST93C46 is organised as 128 bytes x 8 bits or 64 words x 16 bits. If the ORG input is left unconnected (or connected to VCC) the x16 organization is selected, when ORG is connected to Ground (VSS) the x8 organization is selected. When the ST93C46 is in standby mode, the ORG input should be unconnected or set to either VSS or VCC in order to get minimum power consumption. Any voltage between VSS and VCC applied to ORG may increase the standby current value. POWER-ON DATA PROTECTION During power-up, A Power On Reset sequence is run in order to reset all internal programming circuitry and the device is set in the Write Disable mode. When VCC reaches its functional value, the device is properlyreset (in the Write Disable mode) and is ready to decode and execute an incoming instruction. INSTRUCTIONS The ST93C46 has seven instructions, as shown in Table 6. Each instruction is preceded by the rising edge of the signal applied on the S input (assuming that the clock C is low), followed by a '1' read on D input during the rising edge of the clock C. The op-codes of the instructions are made up of the 2 followingbits. Some instructions useonly these first two bits, others use also the first two bits of the address to define the op-code. The op-code is followed by an address for the byte/word which is made up of six bits for the x16 organization or seven bits for the x8 organization. Table 6. Instruction Set
Instruction READ WRITE EWEN EWDS ERASE ERAL WRAL Description Read Data from Memory Write Data to Memory Erase/Write Enable Erase/Write Disable Erase Byte or Word Erase All Memory Write All Memory with same Data Op-Code 10 01 00 00 11 00 00 x8 Org Address (ORG = 0) A6-A0 A6-A0 11XXXXX 00XXXXX A6-A0 10XXXXX 01XXXXX D7-D0 Data Q7-Q0 D7-D0 x16 Org Address (ORG = 1) A5-A0 A5-A0 11XXXX 00XXXX A5-A0 10XXXX 01XXXX D15-D0 Data Q15-Q0 D15-D0
The ST93C46 is fabricated in CMOS technology and is therefore able to run from zero Hz (static input signals) up to the maximum ratings (specified in Table 5). Read The Read instruction (READ) outputs serial data on the Data Output (Q). When a READ instruction is received, the instruction and address are decoded and the data from the memory is transferred into an output shiftregister. A dummy '0' bit is output first followed by the 8 bit byte or the 16 bit word with the MSB first. Output data changes are triggered by the Low to High transition of the Clock (C). The ST93C46 will automatically increment the address and will clock out the next byte/word as long as the Chip Select input (S) is held High. In this case the dummy '0' bit is NOT output between bytes/words and a continuous stream of data can be read. Erase/Write Enable and Disable The Erase/Write Enable instruction (EWEN) authorizesthe following Erase/Write instructions to be executed, the Erase/Write Disable instruction (EWDS) freezes the execution of the following Erase/Write instructions. When power is first applied to the ST93C46, Erase/Write is inhibited. When the EWEN instruction is executed, Write instructions remain enabled until an Erase/Write Disable instruction (EWDS) is executed or VCC falls below the power-on reset threshold. To protect the memory contents from accidental corruption, it is advisable to issue the EWDS instruction after every write cycle. The READ instruction is not affected by the EWEN or EWDS instructions.
Note: X = don't care bit.
6/13
ST93C46A/46C/46T, ST93C47C/47T
Erase The Erase instruction (ERASE) programs the addressed memory byte or word bits to '1'. Once the address is correctly decoded,the falling edge of the Chip Select input (S) starts a self-timed programming cycle. If the ST93C46 is still performing the write cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C46 will ignore any data on the bus. When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C46 is ready to receive a new instruction. Write The Write instruction (WRITE) is followed by the address and the 8 or 16 data bits to be written. Data input is sampled on the Low to High transition of the clock. After the last data bit has been sampled, Chip Select (S) must be brought Low before the next rising edge of the clock (C), in order to start the self-timed programming cycle. If the ST93C46 is still performing the write cycle, the Busy signal
Figure 6. READ, WRITE, EWEN, EWDS Sequences
READ
S
D
1 1 0 An
A0
Q ADDR OP CODE
Qn DATA OUT
Q0
WRITE
S CHECK STATUS D 1 0 1 An A0 Dn D0
Q ADDR OP CODE DATA IN BUSY READY
ERASE WRITE ENABLE
S
ERASE WRITE DISABLE 1 0 0 1 1 Xn X0
S
D
D
1 0 0 0 0 Xn X0
OP CODE
OP CODE
AI00878C
Notes: 1. An: n = 5 for x16 org. and 6 for x8 org. 2. Xn: n = 3 for x16 org. and 4 for x8 org.
7/13
ST93C46A/46C/46T, ST93C47C/47T
INSTRUCTIONS (cont'd) (Q = 0) will be returned if S is driven high, and the ST93C46 will ignore any data on the bus. When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C46 is ready to receive a new instruction. The Write instruction includes an automatic Erase cycle before writing the data, it is therefore unnecessary to execute an Erase instruction before a Write instruction execution. Erase All The Erase All instruction (ERAL) erases the whole memory (all memory bits are set to "1"). A dummy address is input during the instruction transfer and the erase is made in the same way as the ERASE instruction above. If the ST93C46 is still performing the write cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C46 will ignore any data on the bus. When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C46 is ready to receive a new instruction. Write All For correct operation, an ERAL instruction should be executed before the WRAL instruction. The Write All instruction (WRAL) writes the Data Input byte or word to all the addresses of the memory. In the WRAL instruction, NO automatic erase is made so all bytes/words must be erased before the WRAL instruction. If the ST93C46 is still performing the write cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C46 will ignore any data on the bus. When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C46 is ready to receive a new instruction.
Figure 7. ERASE, ERAL Sequences
ERASE
S CHECK STATUS D 1 1 1 An A0
Q ADDR OP CODE BUSY READY
ERASE ALL
S CHECK STATUS D 1 0 0 1 0 Xn X0
Q ADDR OP CODE
AI00879B
BUSY
READY
Notes: 1. An: n = 5 for x16 org. and 6 for x8 org. 2. Xn: n = 3 for x16 org. and 4 for x8 org.
8/13
ST93C46A/46C/46T, ST93C47C/47T
Figure 8. WRAL Sequence
WRITE ALL
S CHECK STATUS D 1 0 0 0 1 Xn X0 Dn D0
Q ADDR OP CODE
AI00880C
DATA IN
BUSY
READY
Note: 1. Xn: n = 3 for x16 org. and 4 for x8 org.
READY/BUSY Status During every programming cycle (after a WRITE, ERASE, WRAL or ERAL instruction) the Data Output (Q) indicates the Ready/Busy status of the memory when the Chip Select is driven High. Once the ST93C46 is Ready, the Data Output is set to '1' until a new start bit is decoded or the Chip Select is brought Low. COMMON I/O OPERATION The Data Output (Q) and Data Input (D) signals can be connected together, through a current limiting resistor, to form a common, one wire data bus. Some precautions must be taken when operating the memory with this connection, mostly to prevent a short circuit between the last entered address bit (A0) and the first data bit output by Q. The reader should refer to the SGS-THOMSON application note "MICROWIRE EEPROM Common I/O Operation". DIFFERENCES BETWEEN ST93C46A AND ST93C46C The ST93C46C is an enhanced version of the ST93C46A and offers the following extra features: - Enhanced ESD voltage - Functional security filtering glitches on the clock input (C). Refer to Table 2 (Absolute Maximum Ratings) for more about ESD limits. The following description will detail the Clock pulses counter (available only on the ST93C46C).
In a normal environment, the ST93C46 is expected to receive the exact amount of data on the D input, that is the exact amount of clock pulses on the C input. In a noisy environment, the amount of pulses received (on the clock input C) may be greater than the clock pulsesdelivered by the Master (Microcontroller) driving the ST93C46C. In such a case, a part of the instruction is delayed by one bit (see Figure 9), and it may induce an erroneous write of data at a wrong address. The ST93C46C has an on-board counter which counts the clock pulses from the Start bit until the falling edge of the Chip Select signal. For the WRITE instructions, the number of clock pulses incoming to the counter must be exactly 18 (with the Organisation by 8) from the Start bit to the falling edge of Chip Select signal (1 Start bit + 2 bits of Op-code + 7 bits of Address + 8 bits of Data = 18): if so, the ST93C46C executes the WRITE instruction; if the number of clock pulses is not equal to 18, the instruction will not be executed (and data will not be corrupted). In the same way, when the Organisation by 16 is selected, the number of clock pulses incoming to the counter must be exactly 25 (1 Start bit + 2 bits of Op-code + 6 bits of Address + 16 bits of Data = 25) from the Start bit to the falling edge of Chip Select signal: if so, the ST93C46C executes the WRITE instruction; if the number of clock pulses is not equal to 25, the instruction will not be executed (and data will not be corrupted). The clock pulse counter is active only on ERASE and WRITE instructions (WRITE, ERASE, ERAL, WRALL).
9/13
ST93C46A/46C/46T, ST93C47C/47T
Figure 9. WRITE Sequence with One Clock Glitch
S
C
D
An START "0" WRITE "1"
An-1 Glitch
An-2 D0
ADDRESS AND DATA ARE SHIFTED BY ONE BIT
AI01395
ORDERING INFORMATION SCHEME Example: ST93C46A M 1 013TR
Operating Voltage 46 4.5V to 5.5V 47 3V to 5.5V A
(1)
Revision CMOS F3 B
(2)
Package PSDIP8 0.4 mm Frame
Temperature Range 1 6 0 to 70 C -40 to 85 C
Option 013TR Tape & Reel Packing (A, T ver.) TR Tape & Reel Packing (C version)
C CMOS F4 T CMOS F3 90 Turn pin out
M SO8 150mil Width
3 (3) -40 to 125 C
Notes: 1. Revision "A" is not available for the ST93C47 product. 2. ST93C46CB1 is available in 0.25mm lead Frame only. 3. Temperature range on special request only.
Devices are shipped from the factory with the memory content set at all "1's" (FFFFh for x16, FFh for x8). For a list of available options (Operating Voltage, Package, etc...) or for further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you.
10/13
ST93C46A/46C/46T, ST93C47C/47T
PSDIP8 - 8 pin Plastic Skinny DIP, 0.4mm lead frame
Symb Typ A A1 A2 B B1 C D E E1 e1 eA eB L N CP
PSDIP8
mm Min Max 4.80 0.70 3.10 0.38 1.15 0.38 9.20 7.62 - 6.30 2.54 - 8.40 - 3.60 0.58 1.65 0.52 9.90 - 7.10 - - 9.20 3.00 8 0.10 3.80 0.100 0.300 Typ
inches Min Max 0.189 0.028 0.122 0.015 0.045 0.015 0.362 - 0.248 - 0.331 - 0.142 0.023 0.065 0.020 0.390 - 0.280 - - 0.362 0.118 8 0.004 0.150
A2 A1 B B1 D
N
A L eA eB C
e1
E1
1
E
PSDIP-a
Drawing is not to scale
11/13
ST93C46A/46C/46T, ST93C47C/47T
SO8 - 8 lead Plastic Small Outline, 150 mils body width
Symb Typ A A1 B C D E e H h L N CP
SO8
mm Min 1.35 0.10 0.33 0.19 4.80 3.80 1.27 - 5.80 0.25 0.40 0 8 0.10 Max 1.75 0.25 0.51 0.25 5.00 4.00 - 6.20 0.50 0.90 8 0.050 Typ
inches Min 0.053 0.004 0.013 0.007 0.189 0.150 - 0.228 0.010 0.016 0 8 0.004 Max 0.069 0.010 0.020 0.010 0.197 0.157 - 0.244 0.020 0.035 8
h x 45 A C B e D CP
N
E
1
H A1 L
SO-a
Drawing is not to scale
12/13
ST93C46A/46C/46T, ST93C47C/47T
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1997 SGS-THOMSON Microelectronics - All Rights Reserved (R) MICROWIRE is a registered trademark of National Semiconductor Corp. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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